It is ideally suited for fast switching driving of power igbts and mosfets used in motor control inverter applications and high performance power systems. A new gate driver integrated circuit for igbt devices with. This desaturation of the inverters can also occur due to an insufficient gate drive signal caused by inverter gate driver misperformance or by driver supply voltage issues. Igbt behavior during desat detection and short circuit. If the only impedance is the cable inductance to a shorted motor winding, the current through the device ramps up very rapidly until it saturates, forcing the. A new halfbridge high voltage monolithic igbt gate driver with full protection and diagnostic feedback m.
The td350e device is an advanced gate driver for igbts. In the event of a short circuit, the voltage across the mosfet v ds rises until it hits a threshold which causes the desaturation circuit to drive all six gate drive channels. Ukbased amantys develops next generation igbt gate drive. Single igbt gate driver the il33153 is specifically designed as an igbt driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. The device also includes an igbt desaturation protection with a fault status output. An insulatedgate bipolar transistor igbt is a threeterminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. Added text, but connecting clamp output of the gate driver to the igbt gate is also not an issue. Igbt protection in ac or bldc motor drives by toshio takahashi the new ir27 igbt gate driver ic integrates ground fault and overcurrent protection with soft shutdown, thus providing a compact and comprehensive igbt protection scheme. Introduction a desaturation fault detection circuit provides protection for power semiconductor switches igbt or mosfets against shortcircuit current events which may. Gate is discharged until gate emitter voltage reaches the miller. A desaturation fault detection circuit provides protection for power semiconductor switches igbt or mosfets against shortcircuit current events which may lead to destruction of these power switches. For power devices they should be 0v to 1215v acpl312t to cater for gate thresholds around 4v as well as being able to drive to 15v if miller turnon is a concern.
This document provides design information for smart gate driver. When overcurrent occurs, the igbt will be turn off. I came across desaturation in igbt because of a circuit which was a 3phase ac motor driver. Based on power integrations widely used scale2 chipset, the new gatedrivers are perfectly suited for high. Connection between gate driver and igbt module the gate driver must be located very close to the igbt module to minimize stray inductance between the gate driver and igbt module. Merello international rectifier, via trieste 25, 27100 pavia, italy as presented at pcim europe 2003 abstract a new half bridge gate driver ic for high voltage applications developed in highvoltage. Inside the system the gate driver circuit with its extensive control and monitoring functions forms the interface between the microcontroller and the power switches igbt. The first characteristic to check is the output voltage. Purpose of desaturation detector in igbt driver electronics.
This desaturation of the inverters can also occur due to an insufficient gate drive signal caused by inverter gate. The circuit detects voltage buildup across the collector and emitter while the device is fully on. High voltage, isolated igbt gate driver with isolated. An201105 industrial igbt modules explanation of technical. A fast overcurrent protection scheme for igbt modules through dynamic fault current evaluation zhiqiang wang1, xiaojie shi1, leon m. Introduction in the last decade, industrial ac drives have become more advanced in performance and more. Channel 1yellow is vce, channel 2 blue is the gate and channel 3 purple is the input to the comparator. For iso54xx and iso58xx family, a current source with an amplitude of milliamps is generated inside a gate driver to discharge igbt, or silicon carbide mosfet gate capacitance under the condition of the saturation detection.
I,off are the energies lost, respectively, in its turnon and turnoff, and f. Stgap1as automotive galvanically isolated single gate. When desaturation is detected the hybrid gate driver performs a soft shut down of the igbt and starts a timed treset 1. Theres a block which senses that the igbt is coming close to desaturation and prevents it through a slow stop signal at its gate base. Although designed for driving discrete and module igbts, this device offers a cost effective solu. Igbt and mosfet desaturation protection page 2 in the previous page i mainly discussed the voltage or vsat detection method to prevent an igbt from saturating. The ics deliver a gate current of up to 8a and support systems of over 110kw without an external booster, or up to 30a gate current and over 400kw with an external booster. Igbtdriver circuit for desaturated turnoff with high. Us7466185b2 igbtdriver circuit for desaturated turnoff.
Application note an 7002 connection of gate drivers to. Igbt applications and social impact 070711 no border. Igbt is off, a low impedance path is established between the igbt gate and emitter to carry the miller current, and the voltage spike on the igbt gate is greatly reduced. When desaturation is active, a fault signal is sent across the isolation barrier, pulling the. Generate gate signals to turnon or turnoff the igbt according to the command signals from the control circuit gate drivers usually provide the electrical isolation e. Driving and protecting igbts in inverter applications. The plug and play solutions below are intended for customers who want to use a complete gate drive unit for their igbt application. A common fault condition in motor drive applications involves an igbt turning on into a shortcircuit.
An igbt desaturation circuit is the alternative way to protect the igbts. Internal or personal use of this material is permitted. Desaturation definition of desaturation by the free dictionary. The infineon eicedriver 1ed family is the high voltage gate drive ic. The ir2114ir2214 gate driver family is suited to drive a single half bridge in power switching applications. High voltage diode and blanking capacitor are connected to desat terminal. In this work, a gate driver with desaturation protection is designed for the. An igbt driver turns on and off the igbt very quickly by charging and discharging the small capacitance between the gate and source. It consists of four alternating layers pnpn that are controlled by a metaloxidesemiconductor. Mar 09, 2016 selecting a suitable igbt driver basic functions of gate drivers. Can someone tell me what this circuit is used for and what benefit it has to the driver and. During turnoff, the gate voltage is monitored and the clamp output is activated when the. Medical equipment standard iec 610101, safety standard for measurement, control and lab equipment.
A fast overcurrent protection scheme for igbt modules through. What does the igbt desaturation hdf fault mean on the atv61 and atv71 drives. Closedloop igbt gate drive featuring highly dynamic dldt and dvdt control y. Several hybrid ic gate drivers implementing desaturation detection are singleinline packaged and have outlines similar to the m57962l shown in figure 8. It consists of four alternating layers pnpn that are controlled by a. It consists of four alternating layers pnpn that are controlled by a metaloxidesemiconductor mos gate structure without. These gate charge dynamic input characteristics show the electric load necessary to. An advantageous solution, even for highpower igbt modules, is to mount the gate driver onto the igbt module directly. Transistor igbt insulated gate bipolar transistor is essentially a voltage controlled power electronics device, replacing the conventional power bjts bipolar junction transistors and mosfets, as a switching devices. A driver circuit comprising an insulated gate bipolar transistor having a collector coupled to a voltage supply, an emitter coupled to a source of reference potential, and a gate configured to receive a control signal from a driver circuit, and a desaturation circuit conductively coupled between an insulated gate and a collector of the insulated gate bipolar transistor to desaturate the. May i know what is meant by collector to emitter saturation voltage. This desaturation detector uses a voltage comparator. This desaturation of the inverters can also occur due to.
Concept of power electronics and definition of a gate driver types of gate driver. The overcurrent protection circuit uses the principle of desaturation of collector. Although high power bjts are available but they have low switching speed. The ap18 provides a complete, tested, fast timetomarket solution for companies that need to control and interface to high voltage igbt modules a transformer coupled dcdc converter provides 5000v isolation while developing only 10pf leakage capacitance between primary and secondary.
Igbt gate driver reference design for parallel igbts with. Active miller clamp, desaturation, galvanic isolation, gate driver, igbt. Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices. If they fail, it is reasonable to assume that the health of the user or other. What does the igbt desaturation hdf fault mean on the. Ixys integrated circuits division offers new dual igbt gate. Hi friends, somehow, i do not understand this word completely. While igbt s and mosfets are used for very similar applications it should be noted there are two main differences, the mosfet tends to lean towards. Designers unfamiliar with mosfet or igbt input characteristics begin drive circuit design by determining component values based on the gate tosource, or input, capacitance listed on the data sheet. Desaturation circuit for an igbt infineon technologies ag. Looking for online definition of igbt or what igbt stands for. Igbt drive optocoupler with desaturation detection.
Igbt insulated gate bipolar transistor a power transistor that has characteristics of both mosfet and bipolar junction transistors bjts. Driver cores from the skhi and skyper family can be optimized using adapter boards for each module type. This article provides an overview of different gate driver topologies for different power ranges and shows examples for monolithic integration of the driver functionality. Industrial igbt modules application note an 20 explanation of technical information 7 1105 v1.
Introduction galvanically isolated gate drivers gigd have gained a signi. Kolar this material is published in order to provide access to research results of the power electronic systems laboratory ditet eth zurich. Analysis and design aspects of a desaturation detection. Designing a motor drive or inverter systems using a gate drive optocoupler driving mosfet buffers helps to maximize igbt gate drive design scalability from low to high power systems. The stgap1as is a galvanically isolated single gate driver for nchannel mosfets and igbts with advanced protection, configuration and diagnostic features. What is the difference between driving a mosfet gate and an. A direct short cause vce to rise, it crosses the threshold on the comparator causing the microcontroller to pull the driver low. Ncd5701 high current igbt gate driver on semiconductor. Using isolated gate drivers for mosfet, igbt and sic. Jul 29, 2009 i recently found a schematic for an igbt driver, it has something called a desaturation detector connected to the collector of the transistor. A new halfbridge high voltage monolithic igbt gate driver. Gon2 turnon gate output 2 those pins are connected through a resistor to the gate of igbt with short wire length see gate resistors calculation vc2 collector desat channel 2 desaturation voltage input. This means that the gate charge value of the igbt must be much smaller than the capacitor. A new gate driver integrated circuit for igbt devices with advanced protections article pdf available in ieee transactions on power electronics 211.
Active miller clamp, desaturation, galvanic isolation, gate driver, igbt, soft shutdown, under voltage lock out. Input compatible with pulse transformer or optocoupler. With respect to any examples or hints given herein, any typical values. There are currently 6 types of drf series fiber optical coupled ig bt driver modules. Energies free fulltext comparative design of gate drivers with. Fiber optically coupled igbt driver modules the drf series fiber optically coupled igbt driver modules made by ict power co. Rcdc igbt gate driver input signals ctrl from inverter control stage and rcdc igbt gate driver output voltage, interlock time is calculated on. Switching using igbts is common in motor drive and power inverter applications. Rc values based on the gate tosource capacitance normally lead to a gate drive that is hopelessly inadequate. A group of wanna be rappingdrugselling white boys in iowa portrayed in the movie wordwhiteboyzword starring danny hootch and wordsnoop doggword. The discrete circuit can be constructed in the secondary side of the opto gate driver or the optoisolated device that has a desaturation circuit. The currentamplifying output stage of the gate driver is thus located, for example, between a coupling point of the diode and the gate of the igbt.
Igbt collector to emitter saturation voltage all about circuits. Hybrid circuits optimize gate drive and protect high power. Igbt behavior during desat detection and short circuit fault protection abstract. May 25, 2010 in one embodiment, a currentamplifying gate driver circuit is connected in series with the first circuit component as a further circuit component between the first circuit component and the gate. Semikron offers two different igbt driver families for any application. The main drive circuit adopts pushpull output mode, which effectively reduces the output impedance of the drive circuit, improves the driving ability and makes it suitable for the drive of high power igbt. The architecture of the stgap1as isolates the channel from the control and the low voltage interface circuitry through true galvanic isolation.
Igbts are specifically designed to meet high power requirements. Since an igbt has a mos gate structure, to charge and discharge this gate when switching, it is necessary to make gate current drive current flow. Mathematical and computational applications mca, mathematics, medical. Protecting the desat terminal from voltage spikes during igbt switching. At this time, the accumulated charge at the gate is slowly released through the rge, so a large voltage spike is prevented when the igbt is turned off. Jun 07, 2017 an igbt driver turns on and off the igbt very quickly by charging and discharging the small capacitance between the gate and source. When an igbt or mosfet are fully on they are known to be saturated, when they exceed their maximum current ratings they are known to over saturate which will eventually cause failure of the device. These circuits are used in a variety of applications, such as medical equipment, inverters for. This is fed to the gate of the mosfet through r gext. The insulated gate bipolar transistor igbt is a minoritycarrier device with high input impedance and large bipolar currentcarrying capability. Isolated drivers single and dualchannel isolated gate drivers that can be used in lowside, highside or halfbridge configurations with isolation up to 5. Undervoltage lockout uvlo protection with to an igbt or mosfet while an undervoltage hysteresis lockout circuit uvlo monitors the output power supply to ensure sufficient gate drive voltage. The earlier ones did need the reversed gate but they found a way to get around that problem. Smart gate driver coupler tips for designing desat detection.
This is achieved because igbt module variation, such as the position of gate drive connections, is accommodated through use of a module interface card which means the ng gate drive can target modules from 1700v to 3300v, and up to 6500v in the future. Ixys, announced the availability of the ix2204 dual igbt gate driver. Galvanically isolated igbt gate driver with advanced. Currently six types of igbt driver modules are available to our customers. Severity classification of osa is based on the frequency and depthnadir of the desaturations and the number of desaturation clusters, defined as periods of desaturation greater than or equal to5 drops greater than or equal to 4% from baseline within a 1030minute period table 1. It is mostly used when an igbt is run at rated high frequencies like in switch mode power supply smps. The first test is simply a resistor between the driver and the gate of the igbt. Fuchs christianalbrechtsuniversity of kiel, germany institute of power electronics and electrical drives kaiserstr. Introduced in the 1980s, the igbt handles high current, a characteristic of bjts, but enables fast switching with greater ease of control.
There is a huge problem with this method as a huge current has to flow before this condition is triggered, since the current is high the inductance in the circuit creates a huge. These drivers provide high gate driving capability 2 a source, 3 a sink and require low quiescent current, which allows the use of b ootstrap power supply techniques in. Using isolated gate drivers for mosfet, igbt and sic applications nagarajan sridhar strategic marketing manager new products and roadmap. Our gate driver solutions, resources and expertise make it easier for you to design efficient, reliable and power dense systems. Many designers view igbt as a device with mos input characteristics and bipolar output characteristic that is a voltagecontrolled bipolar device. Gate driver for igbt with desat protection all about. Smart gate driver coupler tlp5214atlp5214 application note. When you say, desaturation protection, do you mean tail current. Wolfspeeds cgd15fb45p1 is a six channel gate driver for 1200v sic mosfet power modules. Hvic is a high voltage ic which drives gate of power mosfet or igbt directly in response. Us7768337b2 igbtdriver circuit for desaturated turnoff.
If they fail, it is reasonable to assume that the health of the user or other persons may be. Overcurrent detection is integrated in the adum48 to protect the igbt in case of desaturation andor overcurrent events. Closedloop igbt gate drive featuring highly dynamic dldt. An insulated gate bipolar transistor igbt is a threeterminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. The family meets iec 6074717 and vde 088417 requirements and also have desaturation shortcircuit protection with advanced soft shut down assd for power switch protection. Igbt gate driver reference design for parallel igbts with shortcircuit protection and external bjt buffer 2 system design theory 2.
Effectively, there are two ways to slow down the turn off process reduce di or extend dt. The igbt you linked to shouldnt have problems with that, its a newer component. Ixys integrated circuits division offers new dual igbt gate driver the ix2204 is also well suited for driving sic mosfets beverly, ma march 25, 2014. Each of the six gate drive channels is protected by a desaturation circuit. Analysis and design aspects of a desaturation detection circuit for low voltage power mosfets bjoern wittig, matthias boettcher, friedrich w. The maximum average output current of the driver must be higher than the calculated value. Gate driver hybrid ics model vla517 have similar kind of protective circuit built in, thereby simplifying the drive circuit design. Our integrated circuits, igbt drivers, and diodes enable compact, energyefficient acdc power supplies for a vast range of electronic products including mobile devices, tvs, pcs, appliances, led lights, smart utility meters, traction motors, dc. Selection of gate drivers general considerations the driver must be able to provide the necessary gate current i g output current output power. For more details, refer to chapter 7 drive circuit design. Hsf and ful are defined by the shortcircuit conditions while the switch is. High voltage gate driver ic with reinforced isolation.
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